基于能量面积的串联SiC MOSFET动态均压策略A dynamic voltage balancing strategy for series-connected SiC MOSFETs based on energy area
陈鼎熙,赵波,闫婧,李显,刘文博,李澄宇
摘要(Abstract):
针对柔性直流输电阀中串联碳化硅金属-氧化物-半导体场效应晶体管(silicon carbide metal-oxide-semiconductor field-effect transistor,SiC MOSFET)在关断过程中动态电压不均的难题,提出一种基于能量面积的闭环延时均压策略。通过实时采集各器件在关断动态过程开始后固定时间内的漏源极电压并进行数值积分,得到能量面积作为均压判断指标;结合现场可编程门阵列自适应地调整各器件的栅极驱动延时,实现多周期闭环均压控制。为验证所提策略,建立了一套基于模块化多电平换流器子模块与功率电感的稳态功率运行实验电路平台,电路中每个阀臂均由4个SiC MOSFET串联而成,在1 500 V电压等级下,最大电流2.08 A。实验结果表明,所提策略将SiC MOSFET串联时的关断电压峰值不均衡度从无控制时的最高21.21%降至2.08%,并在最多11个开关周期内将4个串联器件的关断电压峰值不均衡度调至最优,其中单个器件调节时间最多为5个开关周期。
关键词(KeyWords): 串联均压;碳化硅金属-氧化物-半导体场效应晶体管(SiC MOSFET);延时调节;闭环控制
基金项目(Foundation):
作者(Author): 陈鼎熙,赵波,闫婧,李显,刘文博,李澄宇
DOI: 10.16508/j.cnki.11-5866/n.2026.01.010
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